 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistor PNP Silicon MMBT2907AWT1 These transistors are designed for general purpose mplifier applications. They are housed in the SOT-323/ SC-70 package which is designed for low power surface mount applications. 3 COLLECTOR 1 1 BASE 2 3 2 EMITTER CASE 419-02 , STYLE 3 SOT-323 / SC - 70 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value - 60 - 60 - 5.0 - 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RJA TJ , Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2907AWT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (I C = - 10 mAdc, I B = 0) Collector-Emitter Breakdown Voltage (I C = - 10 mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10Adc, I C = 0) Base Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) Collector Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. V V (BR)CBO V (BR)CEO -60 -- Vdc -60 -5.0 -- -- -- -- - 50 - 50 Vdc Vdc nAdc nAdc (BR)EBO I BL I CEX K2-1/2 LESHAN RADIO COMPANY, LTD. MMBT2907AWT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 75 100 100 100 50 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain(1) (I C =-0.1 mAdc, V CE =-10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150mAdc, V CE = -10Vdc) (I C = -500mAdc, V CE =-10 Vdc) Collector-Emitter Saturation Voltage(1) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) Base-Emitter Saturation Voltage(1) (I C = -150 mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc ) -- -- -- -- -- Vdc -0.4 -1.6 Vdc -- -- -1.3 -2.6 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (I C = -50mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -2.0Vdc, I C = 0, f = 1.0 MHz) f T 200 -- obo -- 8.0 30 MHz pF pF C C ibo -- SWITCHING CHARACTERISTICS Turn-On Time (V CC = -30 Vdc, Delay Time I C = -150 mAdc, I B1 = -15 mAdc) Rise Time Storage Time (V CC = -6.0 Vdc, Fall Time I C = -150 mAdc,I B1 = I B2 = 15 mAdc) Turn-Off Time 1. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. t on td tr ts tf t off -- -- -- -- -- -- 45 10 40 80 30 100 ns ns K2-2/2 |
Price & Availability of MMBT2907AWT1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |